International Business Machines Corporation
Resistance drift mitigation in non-volatile memory cell

Abstract:

A mushroom-type Phase-Change Memory (PCM) device includes a substrate, a lower interconnect disposed in the substrate, a first dielectric layer disposed on the substrate, a bottom electrode disposed in the first dielectric layer and extending above an upper surface of the first dielectric layer, a type drift-mitigation liner encircling an upper portion of the bottom electrode extending above the upper surface of the first dielectric layer, a PCM element disposed on the liner and an upper surface of the bottom electrode, a top electrode disposed on the PCM element, and a second dielectric layer disposed on an exposed portion of the first dielectric layer and the top electrode, wherein the second dielectric layer is disposed on sidewalls of the liner, the PCM element, and the top electrode.