International Business Machines Corporation
ELECTRICAL MEMRISTIVE DEVICES BASED ON BILAYER ARRANGEMENTS OF HFOy AND WOx

Abstract:

An electrical memristive device has a layer structure. The later structure comprises two electrodes and a bilayer material arrangement that connects the two electrodes. The bilayer material arrangement may, for example, be sandwiched by the two electrodes, in direct contact therewith. The bilayer material arrangement includes an HfO.sub.y layer, where 1.3.+-.0.1.ltoreq.y<1.9.+-.0.1, as well as a WO.sub.x layer in direct contact with the HfO.sub.y layer, where 2.5.+-.0.1.ltoreq.x<2.9.+-.0.1. The bilayer arrangement involves sub-stoichiometric layers of HfO.sub.y and WO.sub.x, where the WO.sub.x layer may advantageously have a polycrystalline structure in the monoclinic phase, while the HfO.sub.y layer is preferably amorphous.