International Business Machines Corporation
NONMETALLIC LINER AROUND A MAGNETIC TUNNEL JUNCTION

Abstract:

A semiconductor structure may include a magnetic tunnel junction layer on top and in electrical contact with a microstud, a hard mask layer on top of the magnetic tunnel junction layer, and a liner positioned along vertical sidewalls of the magnetic tunnel junction layer and vertical sidewalls of the hard mask layer. A top surface of the liner may be below a top surface of the hard mask layer. The semiconductor structure may include a spacer on top of the liner. The liner may separate the spacer from the magnetic tunnel junction layer and the hard mask layer. The semiconductor structure may include a first metal layer below and in electrical contact with the microstud and a second metal layer above the hard mask layer. A bottom portion of the second metal layer may surround a top portion of the hard mask layer.