International Business Machines Corporation
Asymmetric threshold voltages in semiconductor devices

Last updated:

Abstract:

Semiconductor devices and methods of forming the same include forming an inner spacer on a semiconductor fin. Two outer spacers are formed around the inner spacer, with one outer spacer being separated from the inner spacer by a gap. A dipole-forming layer is formed on the semiconductor fin in the gap. A gate stack is formed on the semiconductor fin, between the outer spacers.

Status:
Grant
Type:

Utility

Filling date:

23 Dec 2020

Issue date:

13 Sep 2022