International Business Machines Corporation
Asymmetric threshold voltages in semiconductor devices
Last updated:
Abstract:
Semiconductor devices and methods of forming the same include forming an inner spacer on a semiconductor fin. Two outer spacers are formed around the inner spacer, with one outer spacer being separated from the inner spacer by a gap. A dipole-forming layer is formed on the semiconductor fin in the gap. A gate stack is formed on the semiconductor fin, between the outer spacers.
Status:
Grant
Type:
Utility
Filling date:
23 Dec 2020
Issue date:
13 Sep 2022