International Business Machines Corporation
Fabrication of fin field effect transistors utilizing different fin channel materials while maintaining consistent fin widths

Abstract:

A method of forming vertical fins on a substrate at the same time, the method including, forming a mask segment on a first region of the substrate while exposing the surface of a second region of the substrate, removing a portion of the substrate in the second region to form a recess, forming a fin layer in the recess, where the fin layer has a different material composition than the substrate, and forming at least one vertical fin on the first region of the substrate and at least one vertical fin on the second region of the substrate, where the vertical fin on the second region of the substrate includes a fin layer pillar formed from the fin layer and a substrate pillar.