International Business Machines Corporation
VERTICAL NON-VOLATILE MEMORY STRUCTURE WITH ADDITIONAL BITLINE IN WORDLINE STACK

Abstract:

A method of forming a semiconductor structure includes forming a wordline stack for a non-volatile memory structure over a capping layer, the wordline stack including sets of alternating layers of insulating and gate materials each having a different width. The method also includes forming a first bitline contact layer between first and second portions of the wordline stack each including at least one of the sets. The method further includes forming a floating gate device structure vertically in a channel hole through the wordline stack, the first bitline contact layer and the capping layer. The method further includes forming wordline contacts to the gate layers and a first bitline contact to the first bitline contact layer in holes paced apart from vertical sidewalls of the floating gate device structure, and forming a second bitline contact over at least a portion of a top surface of the floating gate device structure.