International Business Machines Corporation
FABRICATING GATE-ALL-AROUND TRANSISTORS HAVING HIGH ASPECT RATIO CHANNELS AND REDUCED PARASITIC CAPACITANCE

Abstract:

Embodiments of the invention are directed to a semiconductor-based structure. A non-limiting example of the semiconductor-based structure includes a fin formed over a substrate. A tunnel is formed through the fin to define an upper fin region and a lower fin region. A gate structure is configured to wrap around a circumference of the upper fin region.