International Business Machines Corporation
TWO-STAGE TOP SOURCE DRAIN EPITAXY FORMATION FOR VERTICAL FIELD EFFECT TRANSISTORS ENABLING GATE LAST FORMATION

Abstract:

A semiconductor structure including a bottom source drain region arranged on a substrate, a semiconductor channel region extending vertically upwards from a top surface of the bottom source drain region, a metal gate disposed on and around the semiconductor channel region, and a top source drain region above the semiconductor channel region and comprising a first doped epitaxy region and a second doped epitaxy region.