International Business Machines Corporation
PHASE-CHANGE MEMORY WITH NO DRIFT

Abstract:

A bottom electrode is deposited on top of a substrate. A dielectric material layer is deposited on top of the bottom electrode. A hole is created in the dielectric material layer. A lift off layer is spun on and baked on the dielectric material layer. A photoresist layer is spun on and baked on the lift off layer. UV lithography is performed to create an opening above the hole in the dielectric material layer. An Ag layer is deposited on top of the remaining patterned dielectric material layer and the photoresist layer. A Germanium Antimony Telluride (GST) layer is deposited on top of the Ag layer. A top electrode is deposited on top of the GST layer. The Ag layer, the GST layer, and the top electrode located on top of the photoresist layer along with the photoresist layer and the lift off layer are removed.