International Business Machines Corporation
MAGNETIC JUNCTIONS HAVING ENHANCED TUNNEL MAGNETORESISTANCE AND UTILIZING HEUSLER COMPOUNDS

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Abstract:

A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.

Status:
Application
Type:

Utility

Filling date:

3 Apr 2020

Issue date:

10 Jun 2021