International Business Machines Corporation
Spin-orbit-torque magneto-resistive random access memory with stepped bottom electrode

Abstract:

A memory structure, and a method for forming the same, includes a spin-orbit-torque electrode within a dielectric layer located above a substrate. The spin-orbit-torque electrode including a first conductive material, and a spin-orbit torque via is directly above the spin-orbit-torque electrode that includes a second conductive material. A magnetic tunnel junction pillar is directly above the spin-orbit torque via, and the spin-orbit-torque via contacting a center of a bottom surface of the magnetic-tunnel-junction pillar. A third conductive material is positioned directly below the bottom surface of the magnetic tunnel junction pillar on opposite sides of the spin-orbit torque via and directly above the spin-orbit-torque electrode. The third conductive material, the spin-orbit torque electrode and the spin-orbit torque via form a bottom spin-orbit torque electrode of the magnetic tunnel junction pillar.