International Business Machines Corporation
Transistor gate having tapered segments positioned above the fin channel

Abstract:

Embodiments of the invention are directed to a method that includes forming a fin over a major surface of a substrate. The fin includes an active fin region having a top fin surface and a fin sidewall. The top fin surface is substantially parallel with respect to the major surface, and the fin sidewall is substantially perpendicular with respect to the major surface. A gate is formed over and around a central portion of the fin, the gate having a bottom gate region and a top gate region. The bottom gate region is substantially below the top fin surface and includes a bottom gate region sidewall that is substantially parallel with respect to the fin sidewall. The top gate region is substantially above the top fin surface and includes a top gate region sidewall that is at an angle with respect to the major surface.