International Business Machines Corporation
Laser anneal for MRAM encapsulation enhancement

Abstract:

A low temperature deposited (400.degree. C. or less) dielectric passivation layer is formed on physically exposed surfaces of a material stack including a multilayered magnetic tunnel junction (MTJ) pillar and a top electrode. A laser anneal is then performed to improve the physical and chemical properties of the low temperature deposited dielectric passivation layer, without negatively impacting the multilayered MTJ pillar.