International Business Machines Corporation
Double metal patterning
Last updated:
Abstract:
A technique relates to a semiconductor device. Mandrels are formed on a substrate, the mandrels including a first metal layer. A second metal layer is formed on the substrate adjacent to the first metal layer, the first and second metal layers being separated by spacer material.
Status:
Grant
Type:
Utility
Filling date:
9 Apr 2019
Issue date:
20 Jul 2021