International Business Machines Corporation
Double metal patterning

Last updated:

Abstract:

A technique relates to a semiconductor device. Mandrels are formed on a substrate, the mandrels including a first metal layer. A second metal layer is formed on the substrate adjacent to the first metal layer, the first and second metal layers being separated by spacer material.

Status:
Grant
Type:

Utility

Filling date:

9 Apr 2019

Issue date:

20 Jul 2021