International Business Machines Corporation
Source and drain EPI protective spacer during single diffusion break formation

Abstract:

A method is presented for forming single diffusion break (SDB) without damaging source and drain epitaxial growth regions. The method includes forming the source and drain epitaxial regions between sacrificial gates, the sacrificial gates formed over a plurality of fins, depositing an interlayer dielectric (ILD) over the source and drain epitaxial regions, performing SDB patterning, and removing at least one of the sacrificial gates to expose the plurality of fins. The method further includes recessing the plurality of fins to create a first opening, forming inner spacers within the opening, removing the plurality of fins to create a second opening, dimensions of the second opening defined by the inner spacers, and laterally etching the second opening to increase SDB width.