Intel Corporation
Three terminal selectors for memory applications and their methods of fabrication
Last updated:
Abstract:
A memory device includes a first electrode, a non-volatile memory element having a first terminal and a second terminal, where the first terminal is coupled to the first electrode. The memory device further includes a selector having a first terminal, a second terminal and a sidewall between the first and second terminals, where the second terminal of the selector is coupled to the first terminal of the non-volatile memory element. A second electrode is coupled to the second terminal of the selector and a third electrode laterally adjacent to the sidewall of the selector.
Status:
Grant
Type:
Utility
Filling date:
30 Sep 2017
Issue date:
10 Aug 2021