Intel Corporation
Thin-film transistor embedded dynamic random-access memory

Abstract:

An embedded dynamic random-access memory cell includes a wordline to supply a gate signal, a selector thin-film transistor (TFT) above the wordline and that includes an active layer and is configured to control transfer of a memory state of the memory cell between a first region and a second region of the active layer in response to the gate signal, a bitline to transfer the memory state and coupled to and above the first region of the active layer, a storage node coupled to and above the second region of the active layer, and a metal-insulator-metal capacitor coupled to and above the storage node and configured to store the memory state. In an embodiment, the wordline is formed in a back end of line process for interconnecting logic devices formed in a front end of line process below the wordline, and the selector TFT is formed in a thin-film process.