Intel Corporation
Non-planar transition metal dichalcogenide devices
Last updated:
Abstract:
Embodiments related to transistors having one or more non-planar transition metal dichalcogenide cladding layers, integrated circuits and systems incorporating such transistors, and methods for fabricating them are discussed.
Status:
Grant
Type:
Utility
Filling date:
29 Jun 2017
Issue date:
24 Aug 2021