Intel Corporation
Non-planar transition metal dichalcogenide devices

Last updated:

Abstract:

Embodiments related to transistors having one or more non-planar transition metal dichalcogenide cladding layers, integrated circuits and systems incorporating such transistors, and methods for fabricating them are discussed.

Status:
Grant
Type:

Utility

Filling date:

29 Jun 2017

Issue date:

24 Aug 2021