Intel Corporation
Systems and methods to reduce FinFET gate capacitance

Abstract:

The disclosure illustrates systems and methods for removing at least some excess gate material of a FinFET transistor. A FinFET transistor with the excess gate material removed may include a gate with a T-shaped cross-section. The narrower portion of the cross-section may be processed using backside wafer processing. The width of the narrower portion may be defined by a spacer.