Intel Corporation
Face-to-face through-silicon via multi-chip semiconductor apparatus with redistribution layer packaging and methods of assembling same
Last updated:
Abstract:
Reduced-profile semiconductor device apparatus are achieved by thinning a semiconductive device substrate at a backside surface to expose a through-silicon via pillar, forming a recess to further expose the through-silicon via pillar, and by seating an electrical bump in the recess to contact both the through-silicon via pillar and the recess. In an embodiment, the electrical bump contacts a semiconductor package substrate to form a low-profile semiconductor device apparatus. In an embodiment, the electrical bump contacts a subsequent die to form a low-profile semiconductor device apparatus.
Status:
Grant
Type:
Utility
Filling date:
25 Feb 2019
Issue date:
31 Aug 2021