Intel Corporation
HIGH-VOLTAGE SWITCH WITH INTEGRATED WELL REGION

Abstract:

A semiconductor device includes a semiconductor layer having a first doped region, a second doped region, and a third doped region. Each of the regions has the same dopant type. The first doped region extends further into a thickness of the semiconductor layer than the second or third doped regions, and the third doped region provides a conductive pathway between the first doped region and the second doped region. The semiconductor device also includes a first transistor and a second transistor. The first doped region is beneath the first transistor and the second doped region is beneath the second transistor. By using a commonly doped well region that includes each of the first, second, and third doped regions, at least the first and second transistors can be integrated closer together which lowers the overall device footprint. The transistors may be FETs, or other transistor technology.