Intel Corporation
HYBRID BACKSIDE THERMAL STRUCTURES FOR ENHANCED IC PACKAGES
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Abstract:
An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.
Status:
Application
Type:
Utility
Filling date:
7 Feb 2020
Issue date:
12 Aug 2021