Intel Corporation
DYNAMIC RANDOM ACCESS MEMORY (DRAM) WITH SCALABLE META DATA

Abstract:

A memory is described. The memory includes row buffer circuitry to store a page. The page is divided into sections, wherein, at least one of the sections of the page is to be sequestered for the storage of meta data, and wherein, a first subset of column address bits is to: 1) define a particular section of the page, other than the at least one sequestered sections of the page, whose data is targeted by a burst access; and, 2) define a field within the at least one of the sequestered sections of the page that stores meta data for the particular section.