Intel Corporation
MEMORY DEVICE WITH IMPROVED PHASE CHANGE MATERIAL NUCLEATION RATE

Abstract:

A memory cell design is disclosed. The design is particularly well-suited for three-dimensional cross-point (3D X-point) memory configurations. Various embodiments of the memory cell design include a stack of layers having a phase change layer or phase change region that includes nitrogen. The presence of the nitrogen increases crystallization rates of the phase change material during transition from an amorphous state to crystalline state, thus increasing the overall speed of the memory device. In some embodiments, the phase change layer includes a small amount of nitrogen homogenously dispersed within the layer. In some other embodiments, the phase change layer includes one or more regions having nitrogen introduced during the deposition process. In some other embodiments, separate material layers that include nitrogen are provided on one or more sides of the phase change layer.