Intel Corporation
Phase change memory structures

Abstract:

A phase change memory structure (100) can include a memory cell, a dielectric material (130) adjacent to the memory cell, and a bit line. The memory cell can include a phase change material layer (110) and a top electrode layer (120) above the phase change material layer. The dielectric material can have a top surface (135) that is higher than a top surface (125) of the top electrode layer. The bit line (140) can have a non-flat bottom surface that contacts the top surface of the dielectric material and protrudes down from the top surface of the dielectric material to a top surface of the memory cell.