Intel Corporation
Multi-bit read-only memory device
Last updated:
Abstract:
Some embodiments include apparatuses having non-volatile memory cells, each of the non-volatile memory cells to store more than one bit of information; data lines, at most one of the data lines electrically coupled to each of the non-volatile memory cells; a circuit including transistors coupled to the data lines, the transistors including gates coupled to each other; and an encoder including input nodes and output nodes, the input nodes to receive input information from the data lines through the transistors, and the output nodes to provide output information having a value based on a value of the input information.
Status:
Grant
Type:
Utility
Filling date:
21 Jun 2019
Issue date:
19 Oct 2021