Intel Corporation
Group III-V semiconductor devices having asymmetric source and drain structures

Abstract:

Group III-V semiconductor devices having asymmetric source and drain structures and their methods of fabrication are described. In an example, an integrated circuit structure includes a gallium arsenide layer on a substrate. A channel structure is on the gallium arsenide layer. The channel structure includes indium, gallium and arsenic. A source structure is at a first end of the channel structure and a drain structure is at a second end of the channel structure. The drain structure has a wider band gap than the source structure. A gate structure is over the channel structure.