Intel Corporation
CROSS ARRAY FERROELECTRIC TUNNEL JUNCTION DEVICES FOR ARTIFICIAL INTELLIGENCE AND MACHINE LEARNING ACCELERATORS

Abstract:

Embodiments of the present disclosure are directed toward techniques and configurations for cross-point integrated circuits (ICs) for an artificial neural network (ANN). In embodiments, an ANN IC includes at least one synaptic structure. The synaptic structure includes a plurality of synapses that are formed from a plurality of wordlines (WL) and a plurality of bitlines (BLs). Each synapse is formed by ferroelectric tunnel junction (FTJ) coupling a portion of a BL and a portion of a WL. Each synapse is configured to perform an ANN operation based on an input voltage applied to the plurality of WLs and output a current on a corresponding BL of the plurality of BLs. Other embodiments may be described and/or claimed.