Intel Corporation
Semiconductor package with electromagnetic interference shielding using metal layers and vias

Abstract:

A semiconductor package is described herein with electromagnetic shielding using metal layers and vias. In one example, the package includes a silicon substrate having a front side and a back side, the front side including active circuitry and an array of contacts to attach to a substrate, a metallization layer over the back side of the die to shield active circuitry from interference through the back side, and a plurality of through-silicon vias coupled to the back side metallization at one end and to front side lands of the array of lands at the other end to shield active circuitry from interference through the sides of the die.