Intel Corporation
Configurable write command delay in nonvolatile memory

Abstract:

A memory system includes a nonvolatile (NV) memory device with asymmetry between intrinsic read operation delay and intrinsic write operation delay. The system can select to perform memory access operations with the NV memory device with the asymmetry, in which case write operations have a lower delay than read operations. The system can alternatively select to perform memory access operations with the NV memory device where a configured write operation delay that matches the read operation delay.