Intel Corporation
Metal aluminum gallium indium carbide thin films as liners and barriers for interconnects

Abstract:

Disclosed are electronic device assemblies, computing devices, and related methods. An electronic device assembly or a computing device includes an interlayer dielectric region between a first region and a second region, a conductive interlayer structure formed through the interlayer dielectric region, and a barrier region formed around the conductive interlayer structure. The conductive interlayer structure includes a composition of M.sub.l-Al.sub.m--X.sup.1.sub.n--X.sup.2.sub.p--C.sub.q--O.sub.r, wherein M comprises a metal selected from one or more of titanium, zirconium, hafnium, tantalum, niobium and vanadium; C comprises carbon; O comprises oxygen; X.sup.1 comprises gallium; X.sup.2 comprises indium; and l, m, n, p, q and r represent an atomic percent of an element in the barrier region that can be 0 percent, but n and p cannot both be 0 percent. A method includes forming the barrier region within a passage through the interlayer dielectric region.