Intel Corporation
Conductive contact structures for electrostatic discharge protection in integrated circuits
Last updated:
Abstract:
Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). In some embodiments, an IC component may include a conductive contact structure that includes a first contact element and a second contact element. The first contact element may be exposed at a face of the IC component, the first contact element may be between the face of the IC component and the second contact element, the second contact element may be spaced apart from the first contact element by a gap, and the second contact element may be in electrical contact with an electrical pathway in the IC component.
Status:
Grant
Type:
Utility
Filling date:
22 Dec 2019
Issue date:
1 Feb 2022