Intel Corporation
Transition metal dichalcogenide based magnetoelectric memory device

Abstract:

An apparatus is provided which comprises: a stack comprising a magnetoelectric (ME such as BiFeO.sub.3, (LaBi)FeO.sub.3, LuFeO3, PMN-PT, PZT, AlN, SmBiFeO.sub.3, Cr2O.sub.3, etc.) material and a transition metal dichalcogenide (TMD such as MoS.sub.2, MoSe.sub.2, WS.sub.2, WSe.sub.2, PtS.sub.2, PtSe.sub.2, WTe.sub.2, MoTe.sub.2, graphene, etc.); a magnet adjacent to a first portion of the TMD of the stack; a first interconnect adjacent to the magnet; a second interconnect adjacent to the ME material of the stack; and a third interconnect adjacent to a second portion of the TMD of the stack.