Intel Corporation
Self-aligned embedded phase change memory cell having a fin shaped bottom electrode

Abstract:

An integrated circuit comprising a self-aligned embedded phase change memory cell is described. In an example, the integrated circuit includes a bottom electrode. A conductive line is above the bottom electrode along a first direction above a substrate. A memory element is coupled between the bottom electrode and the conductive line, the memory element comprising a phase change material layer that is self-aligned with the conductive line.