Intel Corporation
Sacrificial dielectric for lithographic via formation to enable via scaling in high density interconnect packaging

Last updated:

Abstract:

An apparatus, comprising a substrate comprising a dielectric, a conductor, comprising a via embedded within the dielectric, the via has a first end and a second end, and substantially vertical sidewalls between the first end and the second end, and a conductive structure extending laterally from the first end of the via over the dielectric, wherein the via and the conductive structure have a contiguous microstructure.

Status:
Grant
Type:

Utility

Filling date:

28 Dec 2017

Issue date:

1 Mar 2022