Intel Corporation
TRANSISTOR CAP-CHANNEL ARRANGEMENTS

Abstract:

Disclosed herein are transistor cap-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor cap-channel arrangement may include a channel material having a conductivity type; an insulating material; and a cap material between the channel material and the insulating material, wherein the cap material is different from the channel material and the insulating material, and the cap material has a conductivity type that is a same conductivity type as the channel material.