Intel Corporation
Low temperature thin film transistors and micro lightemitting diode displays having low temperature thin film transistors

Abstract:

Low temperature thin film transistors and micro light-emitting diode displays having low temperature thin film transistors are described. In an example, an integrated circuit structure includes a gate electrode on an insulator structure. A channel material layer is over the gate electrode and extends beyond a first side and a second side of the gate electrode. The channel material layer includes a crystalline Group III-P material. A first conductive contact is on a portion of the channel material layer extending beyond the first side of the gate electrode. A second conductive contact is on a portion of the channel material layer extending beyond the second side of the gate electrode.