Intel Corporation
MEMORY WORDLINE ISOLATION FOR IMPROVEMENT IN RELIABILITY, AVAILABILITY, AND SCALABILITY (RAS)

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Abstract:

A memory device that performs internal ECC (error checking and correction) can treat an N-bit channel as two N/2-bit channels for application of ECC. The memory device includes a memory array to store data and prefetches data bits and error checking and correction (ECC) bits from the memory array for a memory access operation. The memory device includes internal ECC hardware to apply ECC, with a first group of a first half the data bits checked by a first half of the ECC bits in parallel with a second group of a second half of the data bits checked by a second half of the ECC bits.

Status:
Application
Type:

Utility

Filling date:

18 Nov 2021

Issue date:

10 Mar 2022