Intel Corporation
Fin shaping using templates and integrated circuit structures resulting therefrom
Last updated:
Abstract:
Fin shaping using templates, and integrated circuit structures resulting therefrom, are described. For example, integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure above a substrate. The protruding fin portion has a vertical portion and one or more lateral recess pairs in the vertical portion. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack. A second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.
Status:
Grant
Type:
Utility
Filling date:
23 Feb 2018
Issue date:
12 Apr 2022