Intel Corporation
Dual solder methodologies for ultrahigh density first level interconnections

Last updated:

Abstract:

An apparatus, comprising an integrated circuit (IC) package having at least one solder bond pad, a die having at least one solder bond pad, wherein the die is bonded to the IC package by at least one solder joint between the at least one solder bond pad of the die, and the at least one solder bond pad of the IC package, and an underfill material between the IC package and the die, wherein the at least one solder joint is embedded in the underfill material, and wherein the at least one solder joint comprises a first metallurgy and a second metallurgy.

Status:
Grant
Type:

Utility

Filling date:

18 Dec 2017

Issue date:

3 May 2022