Intel Corporation
Quantum dot devices with overlapping gates

Last updated:

Abstract:

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric, and the first gate is at least partially between a portion of the second gate and the quantum well stack.

Status:
Grant
Type:

Utility

Filling date:

26 Jun 2018

Issue date:

17 May 2022