Intel Corporation
STITCHING TO ENABLE DENSE INTERCONNECT ARRANGEMENTS

Abstract:

Methods for fabricating interconnect arrangements of a metallization layer Mx by using stitching that is enabled by subtractive metallization are disclosed. An example method includes providing a metal layer and a collection layer over the metal layer. The method then includes forming openings for two sets of metal lines by performing a first lithographic process to provide, in the collection layer, first openings for a first set of lines, and then performing a second lithographic process to provide, in the collection layer, second openings for a second set of lines. The method further includes performing a third lithographic process to provide a further opening (a stitch opening) that overlaps with at least one of the first openings of a first track and at least one of the second openings of a second track, and, finally, transferring the pattern of the first, second, and stitch openings to the metal layer.