Intel Corporation
Fabrication of Schottky barrier diode using lateral epitaxial overgrowth

Abstract:

A diode is disclosed. The diode includes a semiconductor substrate, a hard mask formed above the substrate, vertically oriented components of a first material adjacent sides of the hard mask, and laterally oriented components of the first material on top of the hard mask. The laterally oriented components are oriented in a first direction and a second direction. The diode also includes a second material on top of the first material. The second material forms a Schottky barrier.