Intel Corporation
INTEGRATED CIRCUIT ASSEMBLIES

Abstract:

Various aspects of the present disclosure set forth IC dies, microelectronic assemblies, as well as related devices and packages. One aspect relates to disaggregating 3D monolithic memory and compute functions to enable tight coupling for fast memory access at high bandwidth. Another aspect relates to microelectronic assemblies relate to nano-TSVs with 3D monolithic memory. Further aspects relate to die stitching and the use of glass carrier structures in microelectronic assemblies. Various aspects disclosed herein advantageously provide a robust set of implementations that may enable significant improvements in terms of optimizing performance of individual IC dies, microelectronic assemblies including one or more of such dies, and IC packages and devices including one or more of such microelectronic assemblies.