Intel Corporation
Spin orbit memory with multiferroic material

Abstract:

A low power, energy efficient, nonvolatile, high-speed memory apparatus is provided that can function at extremely low temperatures (e.g., less than 30 degree Kelvin). The apparatus includes: a first structure comprising a magnet having free or unpinned magnetization; a second structure comprising Type-II multiferroic material, wherein the second structure is adjacent to the first structure; and an interconnect comprising spin orbit material, wherein the interconnect is adjacent to the first structure.