Intel Corporation
Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric

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Abstract:

Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, group III-V substrate). An antenna unit is coupled to the second die. The antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.

Status:
Grant
Type:

Utility

Filling date:

23 Mar 2020

Issue date:

12 Jul 2022