Intel Corporation
High-density dual-embedded microstrip interconnects

Abstract:

In accordance with embodiments disclosed herein, there is provided a high-density dual-embedded-microstrip interconnect. An interconnect includes a reference layer and a dielectric disposed on the reference layer. The interconnect further includes a pair of conductors including a first conductor and a second conductor that are in an edge-facing orientation. The interconnect further includes a third conductor. The pair of conductors may be disposed within the dielectric and the third conductor may be disposed on the dielectric above the pair of conductors. The pair of conductors may be disposed on the dielectric and the third conductor may be disposed within the dielectric below the pair of conductors. First noise received by the third conductor from the first conductor and second noise received by the third conductor from the second conductor at least partially cancel out.