Intel Corporation
LASER-INDUCED THERMAL STRESSING OF INTEGRATED CIRCUITS

Last updated:

Abstract:

Laser-based integrated circuit (IC) device testing apparatus capable of inducing localized regions of high temperature within an IC device under test (DUT). A laser source of sufficiently high output power (e.g., 1 W) within an output band that has an energy less than that of a bandgap of one or more semiconductor materials within the DUT may heat a target portion of the DUT proximal to active devices. High levels of thermal stress are possible with the ability to induce temperatures of 300.degree. C., or more. High spatial resolution of thermal stress with the DUT is possible with laser beam spot diameters of less than 4 .mu.m. Accelerated aging tests and thermal sensitivity characterizations of a DUT may be implemented with laser-based heating to expand the range of possible testing conditions and/or generate more precise test data at a more rapid pace.

Status:
Application
Type:

Utility

Filling date:

1 Apr 2022

Issue date:

14 Jul 2022