Intel Corporation
Tunneling field effect transistors

Abstract:

Disclosed herein are tunneling field effect transistors (TFETs), and related methods and computing devices. In some embodiments, a TFET may include: a first source/drain material having a p-type conductivity; a second source/drain material having an n-type conductivity; a channel material at least partially between the first source/drain material and the second source/drain material, wherein the channel material has a first side face and a second side face opposite the first side face; and a gate above the channel material, on the first side face, and on the second side face.