Intel Corporation
Selector devices with integrated barrier materials

Abstract:

Disclosed herein are selector devices and related devices and techniques. For example, in some embodiments, a selector device may include a first electrode, a second electrode, and a selector material stack between the first electrode and the second electrode. The selector material stack may include a dielectric material layer between a first conductive material layer and a second conductive material layer. A first material layer may be present between the first electrode and the first conductive material layer, and a second material layer may be present between the first conductive material layer and the dielectric layer. The first material layer and the second material layer may be diffusion barriers, and the second material layer may be a weaker diffusion barrier than the first material layer.